Process and device simulation for MOS-VLSI circuits / edited by Paolo Antognetti ... [et al.].
Material type:
TextLanguage: English Publication details: Boston : Nijhoff ; Hingham, MA : Distributors for the U.S. and Canada, Kluwer Boston, 1983.Description: xii, 619 p. : ill. ; 25 cmISBN: - 902472824X (Netherlands)
- 621.38173 23 PRO 1983
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Central Library, University of Rajshahi Reading Room | Non-fiction | 621.38173 PRO 1983 (Browse shelf(Opens below)) | C-1 | Not For Loan | Sheeling | A126502 |
"Proceedings of the NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits, SOGESTA, Urbino, Italy, July 12-23, 1982"--T.p. verso.
"Published in cooperation with NATO Scientific Affairs Division."
Includes bibliographical references.
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