Process and device simulation for MOS-VLSI circuits /
Process and device simulation for MOS-VLSI circuits /
edited by Paolo Antognetti ... [et al.].
- Boston : Hingham, MA : Nijhoff ; Distributors for the U.S. and Canada, Kluwer Boston, 1983.
- xii, 619 p. : ill. ; 25 cm.
"Proceedings of the NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits, SOGESTA, Urbino, Italy, July 12-23, 1982"--T.p. verso. "Published in cooperation with NATO Scientific Affairs Division."
Includes bibliographical references.
902472824X (Netherlands)
Integrated circuits--Very large scale integration--Simulation methods--Congresses.
Metal oxide semiconductors--Simulation methods--Congresses.
621.38173 / PRO 1983
"Proceedings of the NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits, SOGESTA, Urbino, Italy, July 12-23, 1982"--T.p. verso. "Published in cooperation with NATO Scientific Affairs Division."
Includes bibliographical references.
902472824X (Netherlands)
Integrated circuits--Very large scale integration--Simulation methods--Congresses.
Metal oxide semiconductors--Simulation methods--Congresses.
621.38173 / PRO 1983