Central Library OPAC University of Rajshahi

Process and device simulation for MOS-VLSI circuits / (Record no. 66261)

MARC details
000 -LEADER
fixed length control field 01400nam a2200289 a 4500
001 - CONTROL NUMBER
control field 66261
003 - CONTROL NUMBER IDENTIFIER
rucl marc code BD-RjUL
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20211209081522.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 170315s1983 maua b 100 0 eng
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 902472824X (Netherlands)
035 ## - SYSTEM CONTROL NUMBER
System control number (BD-RjUL)66391
040 ## - CATALOGING SOURCE
Original cataloging agency DLC
Transcribing agency DLC
Modifying agency BD-RjUL
Language of cataloging eng
041 ## - LANGUAGE CODE
Language code of text/sound track or separate title eng
082 00 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 621.38173
Edition number 23
Author mark and year PRO 1983
245 10 - TITLE STATEMENT
Title Process and device simulation for MOS-VLSI circuits /
Statement of responsibility, etc. edited by Paolo Antognetti ... [et al.].
260 ## - PUBLICATION, DISTRIBUTION, ETC. (IMPRINT)
Place of publication, distribution, etc. Boston :
Name of publisher, distributor, etc. Nijhoff ;
Place of publication, distribution, etc. Hingham, MA :
Name of publisher, distributor, etc. Distributors for the U.S. and Canada, Kluwer Boston,
Date of publication, distribution, etc. 1983.
300 ## - PHYSICAL DESCRIPTION
Pagination xii, 619 p. :
Illustrations ill. ;
Size 25 cm.
500 ## - GENERAL NOTE
General note "Proceedings of the NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits, SOGESTA, Urbino, Italy, July 12-23, 1982"--T.p. verso.
General note "Published in cooperation with NATO Scientific Affairs Division."
504 ## - BIBLIOGRAPHY, ETC. NOTE
Bibliography, etc Includes bibliographical references.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Integrated circuits
General subdivision Very large scale integration
-- Simulation methods
-- Congresses.
9 (RLIN) 196106
Topical term or geographic name as entry element Metal oxide semiconductors
General subdivision Simulation methods
-- Congresses.
9 (RLIN) 196107
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Antognetti, Paolo.
711 ## - ADDED ENTRY--MEETING NAME
Meeting name or jurisdiction name as entry element NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits
Location of meeting Urbino, Italy)
Date of meeting (1982 :
9 (RLIN) 196108
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Source of classification or shelving scheme Dewey Decimal Classification
Koha item type Books
Holdings
Lost status Source of classification or shelving scheme Damaged status Not for loan Collection code Permanent Location Current Location Shelving location Date acquired Source of acquisition Cost, normal purchase price Total Checkouts Full call number Date last seen Copy number Koha item type
  Dewey Decimal Classification   Not For Loan Non-fiction Central Library, University of Rajshahi Central Library, University of Rajshahi Reading Room 07/09/1989 Karim int. 229.00   621.38173 PRO 1983 15/03/2017 C-1 Books