000			01400nam a2200289 a 4500
001			66261
003			BD-RjUL
005			20211209081522.0
008			170315s1983 maua b 100 0 eng
020			_a902472824X (Netherlands)
035			_a(BD-RjUL)66391
040			_aDLC _cDLC _dBD-RjUL _beng
041			_aeng
082	0	0	_a621.38173 _223 _bPRO 1983
245	1	0	_aProcess and device simulation for MOS-VLSI circuits / _cedited by Paolo Antognetti ... [et al.].
260			_aBoston : _bNijhoff ; _aHingham, MA : _bDistributors for the U.S. and Canada, Kluwer Boston, _c1983.
300			_axii, 619 p. : _bill. ; _c25 cm.
500			_a"Proceedings of the NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits, SOGESTA, Urbino, Italy, July 12-23, 1982"--T.p. verso.
500			_a"Published in cooperation with NATO Scientific Affairs Division."
504			_aIncludes bibliographical references.
650		0	_aIntegrated circuits _xVery large scale integration _xSimulation methods _xCongresses. _9196106
650		0	_aMetal oxide semiconductors _xSimulation methods _xCongresses. _9196107
700	1		_aAntognetti, Paolo. _9195053
711			_aNATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits _cUrbino, Italy) _d(1982 : _9196108
942			_2ddc _cBK
999			_c66261 _d66261