| 000 | 01018cam a22003011 4500 | ||
|---|---|---|---|
| 001 | 14062 | ||
| 003 | BD-RjUL | ||
| 005 | 20211208235551.0 | ||
| 008 | 140205s1967 njuaf b 001 0 eng | ||
| 035 | _a(BD-RjUL)14114 | ||
| 035 | _a(OCoLC)568543 | ||
| 040 |
_aDLC _cODaWU _dOCoLC _dUk _dDLC _dBD-RjUL _beng |
||
| 041 | _aeng | ||
| 082 | 0 | 0 |
_a621.3815 _bFUN 1967 |
| 245 | 1 | 0 |
_aFundamentals of silicon integrated device technology / _cedited by R.M. Burger and R.P. Donovan. |
| 260 |
_aEnglewood Cliffs, N.J. : _bPrentice-Hall, _cc1967. |
||
| 300 |
_axiv, 495 p. : _billus., col. plates ; _c24 cm. |
||
| 490 | 0 | _aSolid state physical electronics series | |
| 490 | 0 | _aPrentice-Hall electrical engineering series | |
| 504 | _aIncludes bibliographies and index. | ||
| 505 | 0 | _av. 1 Oxidation, diffusion, and epitaxy. | |
| 650 | 0 |
_aMicroelectronics. _942618 |
|
| 650 | 0 |
_aSilicon. _935015 |
|
| 700 | 1 |
_aBurger, R. M. _943952 |
|
| 700 | 1 |
_aDonovan, R. P. _ejoint ed. _943953 |
|
| 942 |
_2ddc _cBK |
||
| 999 |
_c14062 _d14062 |
||